TGS 2SC1815LT1
Plastic-Encapsulate Transistors
FEATURES
Power dissipation MARKING : C1815=HFMAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Value 60 50 5 150 200 150 -55-150 Units V V V mA mW ℃ ℃ Plastic-Encapsulate Transistors SOT-23 TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage TemperatureELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Test conditions MIN 60 50 0.1 0.1 0.1 130 400 0.25 1 80 V V MHz TYP MAX UNIT V V uA uA uA IC= 100uA, IE=0 IC= 0.1mA, IB=0 VCB=60V, IE=0 VCE=50V, IB=0 VEB= 5...