GENERAL DESCRIPTION
Passivated, sensitive gate thyristors ina plastic envelope, intended foruse in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. ABSOLUTE MAXIMUM RATINGS
( Ta = 25 OC) Parameter Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current Symbol Typ BT169D BT169G VVDRRRMM 400 600 IT(AV) IT(RMS) 0.5 0.8 ITSM 8.0 Unit V A A A Max. Operating Junction Temperature Tj 110 oC Storage Temperature Tstg -45~150 oC TO-92 ELECTRICAL CHARACTERISTICS
( Ta = 25 OC) Parameter Symbol Repetitive peak off-state voltage s VVDRRRMM Test Conditions Min Typ Max Unit BT169D BT169G — 400 600 — V Average on-state current IT(AV) half sine wave; Tmb< 103 oC — 0.5 — A RMS on-state current IT(RMS) all conduction angles — 0.8 —A On-state voltage VT IT=1.0 A — 1.20 1.35 V Holding current IH VD...
TGS