BU806
BU806 is MEDIUM Voltage & Fast Switching Darlington Transistor manufactured by TGS.
DESCRIPTION
The devices are silicon Epitaxial Planar NPN power transistors in Darlington configuration with integrated base-emitter speed-up diode, mounted in TO-220 plastic package. They can be used in horizontal output stages of 110 o CRT video displays.
Absolute Maximum Ratings ( Ta = 25℃ )
Parameter l Value Unit
Collector-Base Voltage
VCBO 400 V
Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
VCEO VEBO
IC IB Ptot Tj Tstg
200 V 6V 8.0 A 2.0 A 60 W
150 o C -55~150 o C
TO-220
Electrical Characteristics ( Ta = 25℃ )
Parameter Collector Cut-off Current
Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Forward Voltage Storage Time
Symbol Test Conditions
ICES VCE=400V, VBEO=0 IEBO VEB=6V, IC=0 VCEO IC=100m A, IB=0 h FE(1) VCE=5V, IC=5.0A VCE(sat) IC=5.0A,IB=50m A VBE(sat) IC=5.0A,IB=50m A VF IF=4.0A TS IC=5A, IB=0.5A
Min.
- - 200 200
- -
- -
Typ.
- -
- -
- -
- 0.55
Max. Unit 100 u A 3.5 m A
- V
- 1.5 V 2.4 V
2V
-...
