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BUL128D Datasheet PDF

TGS BUL128D

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
Part No. BUL128D
Datasheet BUL128D Download
Manufacturer
TGS
Description HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR
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BUL128D datasheet page 1 preview

APPLICATIONS

● ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
● FLYBACK AND FORWARD SINGLE

DESCRIPTION

The device is designed for use in lighting

ABSOLUTE MAXIMUM RATINGS

Parameter ol Collector-Base Voltage VCBO Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature Storage Temperature VCEO VEBO IC IB Ptot Tj Tstg Value Unit 700 V 400 V 9.0 V 4.0 A 2.0 A 70 W 150