TGS DB3
Silicon Bidirectional Diacs
| Part No. | DB3 |
|---|---|
| Datasheet | DB3 Download |
| Manufacturer |  TGS |
| Description | Silicon Bidirectional Diacs |
| Buy | Stock & Price |
FEATURES
The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse 1111current,The breakover symmetry is within three 1111volts(DB3,DB4). These diacs are intended for use in CCCthyrisitors phase control,circuits for lamp dimming, FFFI universal motor speed control,and heat control. ABSOLUTE RATINGS Parameters Symbols Dimensions in inches and (millimeters) DB3,DB4 UNITS Power dissipation on printed TA=50oC circuit (L=10mm) Pc Repetitive peak on-state current tp=20 S f=120Hz ITRM Operating junction temperature TJ Storage temperature TSTGELECTRICAL CHARACTERISTICS
150.0 2.0 -40--- +125 -40--- +125 Parameters Test Conditions Breakover voltage (NOTE 1) C=22nf(NOTE 2) VBO See FIG.1 Breakover voltage symmetry Dynamic breakover voltage (NOTE 1) I+VBO II-VBOI I± VI C=22nf(NOTE 2) See FIG.1 I=(IBO to IF=10mA) See FIG.1 Output voltage (NO...