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MMBT2222ALT1 - NPN EPITAXIAL PLANAR TRANSISTOR

General Description

The MMBT2222ALT1 is designed for general purpose amplifier and high-speed switching, medium-power switching applications.

Key Features

  • High frequency current gain.
  • High Speed Switching. Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55~+150°C Junction Temperature+150°C.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW.
  • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 75 V VCEO Collector to Emitter Voltage 40 V VEBO Emitter to Base Voltage 6 V IC Collector Current 600 mA Characteristics (Ta=25°C) Symbol Min. Typ.

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Datasheet Details

Part number MMBT2222ALT1
Manufacturer TGS
File Size 29.63 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet MMBT2222ALT1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TIGER ELECTRONIC CO.,LTD MMBT2222ALT1 NPN EPITAXIAL PLANAR TRANSISTOR Description The MMBT2222ALT1 is designed for general purpose amplifier and high-speed switching, medium-power switching applications. Features • High frequency current gain. • High Speed Switching. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature............................................................................................... -55~+150°C Junction Temperature......................................................................................................+150°C • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ...