MMBT5401LT1 Overview
The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages.
MMBT5401LT1 Key Features
- High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA)
- plements to NPN Type MMBT5551LT1
Datasheet Details
| Part number | MMBT5401LT1 |
|---|---|
| Datasheet | MMBT5401LT1-TGS.pdf |
| File Size | 27.44 KB |
| Manufacturer | TGS |
| Description | PNP Transistor |
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