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STN1A60 Datasheet PDF

TGS STN1A60

Silicon Bidirectional Triode Thyristors

Part No. STN1A60
Datasheet STN1A60 Download
Manufacturer
TGS
Description Silicon Bidirectional Triode Thyristors
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STN1A60 datasheet page 1 preview

GENERAL DESCRIPTION

Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO - 92 package which is readily adaptable for use in automatic insertion equipment. STN1A60/80 Parameter Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current Max. Operating Junction Temperature Storage Temperature Symbol Typ Unit STN1A60 STN1A80 VVDRRRMM 600 800 V IT(RMS) 1.0 A ITSM 10 A Tj 110 oC Tstg -45~150 oC Parameter Symbol Test Conditions Repetitive peak off-state voltage s RMS on-state current On-state voltage Holding current T2+G+ Gate trigger current T2+GT2-G- T2-G+ Gate trigger voltage VVDRRRMM IT(RMS) VT IH all conduction angles IT=1.5 A VD =12 V; IGT=10 mA IGT VD =6.0 V; RL= 10Ω VGT VD =6.0 V; RL= 10Ω Min Typ Max Unit STN1A60 STN1A80 — 600 800 — V — 1.0 — A — — 1.60 V —— 5 mA — — 5.0 — — 5.0 mA — — 5.0 — — 12 — 0.5 1.8 V