THAT3xx Datasheet | THAT

Features - 4 Matched NPN Transistors º 300 typical hfe of 100 º 300A minimum hfe of 150 º 300B minimum hfe of 300 - 4 Matched PNP Transistors º 320 typical hfe of 75 - 2 Matched PNP and 2 Matched NPN Transistors º 340 PNP typical hfe of 75 º 340 NPN typical hfe of 100 - Low Voltage Noise º 0.75 n V/ √Hz (PNP) º 0.8 n V/ √Hz (NPN) - High Speed º f T = 350 MHz (NPN) º f T = 325 MHz (PNP) - 500 μV matching between devices - Dielectrically Isolated for low crosstalk and high DC isolation - 36V VCEO Low-Noise Matched Transistor Array ICs THAT 300 Series APPLICATIONS - Low Noise Front Ends - Microphone Preamplifiers - Log/Antilog Amplifiers - Current Sources - Current Mirrors - Multipliers Description The THAT 300, 320 and 340 are large geometry, 4-transistor, monolithic NPN and/or PNP arrays. They exhibit both high speed and low noise, with excellent parameter matching between transistors of the same gender. Typical base-spreading resistance is 25 Ω for the PNP devices (30 Ω for the low-gain NPNs), so their resulting voltage noise is under 1 n V/√Hz. This makes the 300 series ideally suited for low-noise amplifier input stages, log amplifiers, and many other applications. The four-NPN transistor array is available in versions selected for hfe with minimums of 150 (300A) or 300 (300B). Fabricated in a dielectrically isolated, plementary bipolar process, each transistor is electrically insulated from the others by a layer of insulating oxide (not the reverse-biased PN junctions used in conventional arrays). As a result, they exhibit inter-device crosstalk and DC isolation similar to that of discrete transistors. The resulting low collector-to-substrate capacitance produces a typical NPN f T of 350 MHz (325 MHz for the PNPs). Substrate biasing is not required for normal operation, though the substrate should be ac-grounded to optimize speed and minimize crosstalk. An eight-transistor bare-die array with similar performance characteristics (the THAT 380G) is also...