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HX5N80 Datasheet N-channel MOSFET

Manufacturer: TIANJIN HUANXIN TECHNOLOGY

Overview: HX5N80 4.8 Amps，800Volts N-Channel MOSFET ■.

General Description

The HX5N80(C) N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

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Key Features

  • z RDS(ON) = 2.6Ω@VGS = 10 V z Low gate charge ( typical 25nC) z High ruggedness z Fast switching capability z Avalanche energy specified z Improved dv/dt capability.
  • Symbol Power MOSFET.
  • Ordering Information Order Number Normal Lead Free Plating HX5N80(C)-TA3-T HX5N80(C)L-TA3-T HX5N80(C)-TF3-T HX5N80(C)L-TF3-T Note:Pin Assignment: G:Gate D:Drain S:Source Package TO-220 TO-220F Pin Assignment 123 GDS GDS HX5N80(C)L-TA3-T (1)T:Tube,R:Tape Reel （1）Packing Type （2）Package Ty.

More Datasheets from TIANJIN HUANXIN TECHNOLOGY

Part Number Description
HX5N90 N-Channel MOSFET

HX5N80 Distributor