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20J321 - GT20J321

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Part number 20J321
Manufacturer Toshiba
File Size 531.04 KB
Description GT20J321
Datasheet download datasheet 20J321 Datasheet
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    www.DataSheet4U.com GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Switching Applications Fast Switching Applications • • • The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) Low switching loss • • : Eon = 0.40 mJ (typ.) : Eoff = 0.43 mJ (typ.) Low saturation voltage: VCE (sat) = 2.0 V (typ.) FRD included between emitter and collector Unit: mm www.DataSheet4U.com High speed: tf = 0.04 µs (typ.
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