K3236 Datasheet | Toshiba

.. .. 2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications - - - - - 4 V gate drive Low drain-source ON resistance: RDS (ON) = 13.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 42 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 60 V) Enhancement-model: Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 35...