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TW083N65C - Silicon Carbide N-Channel MOSFET

Features

  • (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ. ) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 83 mΩ (typ. ) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 0.6 mA) (6) Recommended gate - source drive voltage: VGS_on = 18 V, VGS_off = 0 V (7) Enhancement mode. 3. Packaging and Internal Circuit TO-247 1: Gate 2: Drain (heatsink) 3: Sou.

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Datasheet Details

Part number TW083N65C
Manufacturer Toshiba
File Size 846.44 KB
Description Silicon Carbide N-Channel MOSFET
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MOSFETs Silicon Carbide N-Channel MOS TW083N65C TW083N65C 1. Applications • Switching Voltage Regulators 2. Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 83 mΩ (typ.) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 0.6 mA) (6) Recommended gate - source drive voltage: VGS_on = 18 V, VGS_off = 0 V (7) Enhancement mode. 3. Packaging and Internal Circuit TO-247 1: Gate 2: Drain (heatsink) 3: Source ©2022-2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2022-07 2024-09-13 Rev.3.0 4.
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