Datasheet4U Logo Datasheet4U.com

TW083Z65C - Silicon Carbide N-Channel MOSFET

Features

  • (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ. ) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 83 mΩ (typ. ) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 0.6 mA) (6) Recommended gate - source drive voltage: VGS_on = 18 V, VGS_off = 0 V (7) Enhancement mode. 3. Packaging and Internal Circuit TO-247-4L(X) 1. Drain (heatsink) 2. Sourc.

📥 Download Datasheet

Datasheet preview – TW083Z65C

Datasheet Details

Part number TW083Z65C
Manufacturer Toshiba
File Size 957.59 KB
Description Silicon Carbide N-Channel MOSFET
Datasheet download datasheet TW083Z65C Datasheet
Additional preview pages of the TW083Z65C datasheet.

📁 Similar Datasheet

Other Datasheets by TOSHIBA

Full PDF Text Transcription

Click to expand full text
MOSFETs Silicon Carbide N-Channel MOS TW083Z65C TW083Z65C 1. Applications • Switching Voltage Regulators 2. Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 83 mΩ (typ.) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 0.6 mA) (6) Recommended gate - source drive voltage: VGS_on = 18 V, VGS_off = 0 V (7) Enhancement mode. 3. Packaging and Internal Circuit TO-247-4L(X) 1. Drain (heatsink) 2. Source 1 3. Source 2 4. Gate Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pin.
Published: |