TW107N65C Datasheet | Toshiba

Features (1) Chip design of 3rd generation (Built-in Si C schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 107 mΩ (typ.) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1.2 m A) (6) Enhancement mode. 3. Packaging and Internal Circuit TO-247 1: Gate 2: Drain (heatsink) 3: Source ©2022 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2022-07 2022-12-14 Rev.2.0 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 - ) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Drain current (pulsed) Power dissipation Channel temperature Storage temperature Mounting torque ( Tc = 25 - ) ( Tc = 100- ) ( Tc = 25 - ) ( Tc = 100- ) ( Tc = 25- ) VDSS VGSS ID ID IDP IDP PD Tch Tstg TOR 650 +25/-10 20 16 45 35 76 175 -55 to 175 0.8 - N- m Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Note1: Ensure that the channel temperature does not exceed 175 - . Symbol Rth(ch-c) Rth(ch-a) Max 1.950 Unit - /W Caution:This transistor is sensitive to electrostatic discharge and should be handled with care. It should...