TC1601 - 2W High Linearity and High Efficiency GaAs Power FETs

General Description

linearity and high Power Added Efficiency.

provides low thermal resistance and low inductance.

Key Features

! 2W Typical Power at 6 GHz PHOTO.

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TC1601 2w high linearity and high efficiency gaas power fets by TRANSCOM - Datasheet Preview

Datasheet Details

Part number	TC1601
Manufacturer	TRANSCOM
File Size	104.13 KB
Description	2W High Linearity and High Efficiency GaAs Power FETs
Datasheet	TC1601 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TC1601 REV4_20060510 2W High Linearity and High Efficiency GaAs Power FETs FEATURES ! 2W Typical Power at 6 GHz PHOTO ENLARGEMENT ! Linear Power Gain: GL = 12 dB Typical at 6 GHz ! High Linearity: IP3 = 43 dBm Typical at 6 GHz ! Via Holes Source Ground ! Suitable for High Reliability Application ! Breakdown Voltage: BVDGO ≥ 15 V ! Lg = 0.35 µm, Wg = 5 mm ! High Power Added Efficiency: PAE ≥ 43 % for Class A Operation ! Lg = 0.35 µm, Wg = 5 mm ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested DESCRIPTION The TC1601 is a Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, Which has high linearity and high Power Added Efficiency.