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TC1601 Datasheet 2w High Linearity And High Efficiency Gaas Power Fets

Manufacturer: TRANSCOM

Overview: TC1601 REV4_20060510 2W High Linearity and High Efficiency GaAs Power.

Datasheet Details

Part number TC1601
Manufacturer TRANSCOM
File Size 104.13 KB
Description 2W High Linearity and High Efficiency GaAs Power FETs
Datasheet TC1601-TRANSCOM.pdf

General Description

The TC1601 is a Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, Which has high linearity and high Power Added Efficiency.

The device is processed with a propriety via-hole process, which provides low thermal resistance and low inductance.

The short gate length enables the device to be used in circuits up to 20 GHz.

Key Features

  • ! 2W Typical Power at 6 GHz PHOTO.

TC1601 Distributor