Datasheet Summary
REV4_20060510
2W High Linearity and High Efficiency GaAs Power FETs
Features
! 2W Typical Power at 6 GHz
PHOTO ENLARGEMENT
! Linear Power Gain: GL = 12 dB Typical at 6 GHz
! High Linearity: IP3 = 43 dBm Typical at 6 GHz
! Via Holes Source Ground
! Suitable for High Reliability Application
! Breakdown Voltage: BVDGO ≥ 15 V
! Lg = 0.35 µm, Wg = 5 mm
! High Power Added Efficiency: PAE ≥ 43 % for Class A Operation
! Lg = 0.35 µm, Wg = 5 mm
! Tight Vp ranges control
! High RF input power handling capability
! 100 % DC Tested
DESCRIPTION
The TC1601 is a Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, Which has high linearity and high Power Added...