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TC1601 Datasheet PDF

TRANSCOM TC1601

The TC1601 is a Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power FET, Which has high linearity and high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides low thermal resistance and low inductance. The short gate length enables the device to be used in circuits up to 20 GHz.
Part No. TC1601
Datasheet TC1601 Download
Manufacturer TRANSCOM
Description 2W High Linearity and High Efficiency GaAs Power FETs
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TC1601 datasheet page 1 preview

FEATURES

! 2W Typical Power at 6 GHz PHOTO ENLARGEMENT ! Linear Power Gain: GL = 12 dB Typical at 6 GHz ! High Linearity: IP3 = 43 dBm Typical at 6 GHz ! Via Holes Source Ground ! Suitable for High Reliability Application ! Breakdown Voltage: BVDGO ≥ 15 V ! Lg = 0.35 µm, Wg = 5 mm ! High Power Added Efficiency: PAE ≥ 43 % for Class A Operation ! Lg = 0.35 µm, Wg = 5 mm ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested

DESCRIPTION

All devices are 100 % DC tested to assure consistent quality. Bond pads are gold plated
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