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Transys
Electronics
L I M I T E D
TO-92MOD Plastic-Encapsulated Transistors
TO-92MOD
1. EMITTER
2SA1160
FEATURE Power dissipation
TRANSISTOR (PNP)
2. COLLECTOR 3. BASE
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PCM : 0.9 W (Tamb=25℃)
Collector current ICM: -2A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
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ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Transition frequency Output capacitance VCE(sat)
unless otherwise specified)
Test conditions MIN -20 -10 -6 -0.1 -0.1 140 60 -0.