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2N3440 - NPN HIGH VOLTAGE SILICON TRANSISTORS

Download the 2N3440 datasheet PDF. This datasheet also covers the 2N3439 variant, as both devices belong to the same npn high voltage silicon transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

SYMBOL 2N3439 VCEO 350 Collector -Emitter Voltage VCBO 450 Collector -Base Voltage VEBO 7.0 Emitter -Base Voltage IC 1.0 Collector Current Continuous IB 0.5 Base Current PD 1.0 Power Dissipation@ Ta=25 degC 5.7 Derate Above 25 deg C PD 5.0 Power Dissipation@ Tc=25 degC 28.6 Derate Above 25 deg C Tj,

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Note: The manufacturer provides a single datasheet file (2N3439_TRANSYS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N3440
Manufacturer TRANSYS
File Size 113.38 KB
Description NPN HIGH VOLTAGE SILICON TRANSISTORS
Datasheet download datasheet 2N3440 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Transys Electronics L I M I T E D NPN HIGH VOLTAGE SILICON TRANSISTORS 2N3439 2N3440 TO-39 High Voltage Silicon Planar Transistors used in High Voltage & High Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C unless otherwise specified) DESCRIPTION SYMBOL 2N3439 VCEO 350 Collector -Emitter Voltage VCBO 450 Collector -Base Voltage VEBO 7.0 Emitter -Base Voltage IC 1.0 Collector Current Continuous IB 0.5 Base Current PD 1.0 Power Dissipation@ Ta=25 degC 5.7 Derate Above 25 deg C PD 5.0 Power Dissipation@ Tc=25 degC 28.