FEATURES
Power dissipation PCM : 0.2 W (Tamb=25℃) TRANSISTOR (PNP) SOT-23-3L 1. EMITTER 2. BASE 3. COLLECTOR 1. 02 0. 025 0. 95¡ À 2. 80¡ À 0. 05 1. 60¡ À0. 05 Collector current A ICM : -0.5 Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS
(Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Ouput Capacitance Turn-on Time Storage Time Turn-on Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(on) unless otherwise specified) Test conditions MIN -60 -40 -5 -0.1 -0.1 75 20 140 50 -0.45 -1.0 150 400 5.0 8.0 35 225 255 -0.75 -1.3 V V MHz pF ns ns ns 300 TYP MAX UNIT V V V Ic=-100µA, IE=0 Ic= -1mA, IB=0 IE= -100µA, IC=0 VCB=- 40 V , IE=0 VEB= -4V , IC=0 0.
TRANSYS