FEATURES
Power dissipation PCM TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR 1. 25¡ À0. 05 1. 01 R EF : 200 mW (Tamb=25℃) 2. 30¡ À0. 05 Collector current : -150 mA ICM Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. 30¡ À0. 03 Unit: mm ELECTRICAL CHARACTERISTICS
(Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-50µA, IE=0 Ic=-1mA, IB=0 IE=-50µA, IC=0 VCB=-60V, IE=0 VEB=-6V, IC=0 VCE=-6V, IC=-1mA IC=-50mA, IB=-5mA VCE=-12V, IC=-2mA, f=30MHz VCB=-12V, IE=0, f=1MHz -60 -50 -6 -0.1 -0.1 120 560 -0.5 100 5 0. 30 2. 00¡ À0. 05 µA µA V MHz pF fT Cob CLASSIFICATION OF hFE(1) R...
TRANSYS