MPS2907A Datasheet | TRANSYS

DESCRIPTION SYMBOL MPS2907 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case VCEO VCBO VEBO IC PD PD Tj, Tstg 40 60 5 600 625 5 1.5 12 -55 to +150 MPS2907A 60 75 UNITS V V V m A m W m W/ºC W m W/ºC ºC Rth(j-a) Rth(j-c) 200 83.3 ºC/W ºC/W PNP SILICON PLANAR EPITAXIAL TRANSISTORS MPS2907 MPS2907A TO-92 Plastic Package .. ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage Collector Base Voltage Emitter-Base Voltage Collector-Cut off Current BVCEO - BVCBO BVEBO ICBO VCB=50V, IE = 0 VCB=50V, IE = 0, Collector-Cut off Current Collector-Cut off Current Emitter Cut off Current Base Cut off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain h FE VCE=10V,IC=0.1m A VCE=10V,IC=1m A VCE=10V,IC=10m A VCE=10V- ,IC=150m A VCE=10V- ,IC=500m A ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DYNAMIC CHARACTERISTICS SYMBOL TEST CONDITION ICEX ICEO IEBO IBEX VCE(sat)- VBE(sat)- TA = 150 C VCE=30V, VEB(off)=0.5V VCE=10V VEB=3V, IC = 0 VCE=30V,VEB(off)=0.5V IC=150m A,IB=15m A IC=500m A,IB=50m A IC=150m A,IB=15m A IC=500m A,IB=50m A IC=10m A,IB=0 IC=10µA,IE=0 IE=10µA, IC=0 MPS2907 MIN MAX 40 60 5 20 20 50 10 10 50 0.4 1.6 1.3 2.6 35 50 75 100 30 300 MPS2907A MIN MAX 60 60 5 10 10 50 10 10 50 0.4 1.6 1.3 2.6 75 100 100 100 50 300 UNITS V V V n A µA n A n A n A n A V V V V µA MPS2907 MIN MAX MPS2907A MIN MAX UNITS Transition Frequency f T- (1) IC=50m A, VCE=20V f=100MHz IE=0, VCB=10V f=1MHz Ic=0, VEB=2V f=1MHz MHz Output Capacitance Input Capacitance Cob Cib 8 30 8 30 PNP SILICON PLANAR EPITAXIAL TRANSISTORS MPS2907 MPS2907A TO-92 Plastic Package .. SWITCHING CHARCTERISTICS SYMBOL TEST CONDITION IC...