TRANSYS MPSA43
NPN EPITAXIAL PLANAR SILICON TRANSISTORS
| Part No. | MPSA43 |
|---|---|
| Datasheet | MPSA43 Download |
| Manufacturer |  TRANSYS |
| Description | NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg C unless otherwise specified)DESCRIPTION
SYMBOL MPSA42 Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation @ Ta=25 degC Derate above 25 deg C Power Dissipation @ Tc=25 degC Derate above 25 deg C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Junction to Ambient VCEO VCBO VEBO IC PD PD Tj, Tstg 300 300 MPSA43 200 200 UNIT V V V mA mW mW./deg C W mW./deg C deg C 6 500 625 5 1.5 12 -55 to +150 Rth(j-c) Rth(j-a) 83.3 200 deg C/W deg C/WELECTRICAL CHARACTERISTICS
(Ta=25 deg C Unless Otherwise Specified)DESCRIPTION
SYMBOL TEST CONDITION MPSA42 VCEO IC=1mA,IB=0 >300 Collector -Emitter Voltage VCBO IC=100uA.IE=0 >300 Collector -Base Voltage VEBO IE=100uA, IC=0 >6.0 Emitter-Base Voltage ICBO VCB=200V, IE=0 <100 Collector-Cut off Current VCB=160V, IE=0 IEBO VEB=6V, IC=0 <100 Emitter-Cut off Current VEB=4V, IC=0 hFE* IC=1mA,VCE=10V >25 DC Current Gain IC=1...