TRSYS 1M110Z
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
| Part No. | 1M110Z |
|---|---|
| Datasheet | 1M110Z Download |
| Manufacturer |  TRSYS |
| Description | GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
| Buy | Stock & Price |
FEATURES
l l l l l l l Low profile package Built-in strain relief Glass passivated junction Low inductance Typical IR less than 5.0 A above 11V High temperature soldering : 260 /10 seconds at terminals Plastic package has Underwriters Laboratory Flammability Classification 94V-OMECHANICAL DATA
Case: Molded plastic, DO-41 Epoxy: UL 94V-O rate flame retardant Lead: Axial leads, solderable per MIL-STD-202, method 208 guaranteed Polarity: Color band denotes cathode end Mounting position: Any Weight: 0.012 ounce, 0.3 gramMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified. Peak Pulse Power Dissipation on TA=50 (Note A) Derate above 50 Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated load(JEDEC Method) (Note B) Operating Junction and Storage Temperature Range NOTES: A. Mounted on 5.0mm2(.013mm thick) land areas. B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
