3EZ200 Datasheet | TRSYS

3EZ11 THRU 3EZ200 GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts Features l l l l l l l l Low profile package Built-in strain relief Glass passivated junction Low inductance Excellent clamping capability Typical ID less than 1 A above 11V High temperature soldering : DO-15 260 /10 seconds at terminals Plastic package has Underwriters Laboratory Flammability Classification 94V-O MECHANICAL DATA Case: JEDEC DO-15, Molded plastic over passivated junction Terminals: Solder plated, solderable per MIL-STD-750, method 2026 Polarity: Color band denotes positive end (cathode) Standard Packaging: 52mm tape Weight: 0.015 ounce, 0.04 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Peak Pulse Power Dissipation (Note A) Derate above 75 Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated load(JEDEC Method) (Note B) Operating Junction and Storage Temperature Range NOTES: A. Mounted on 5.0mm2(.013mm thick) land areas. B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. SYMBOL PD IFSM TJ,TSTG VALUE 3 24 15 -55 to +150 UNITS Watts m W/ Amps 3EZ11 THRU 3EZ200 ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) VF=1.2 V max , IF=500 m A for all types Type No. Nominal Zener Test (Note 1.) Voltage Vz @ IZT current Maximum Zener Impedance (Note 3.) IZT volts ZZT @ IZT ZZk @ IZK IZK m A (Note 2.) Ohms Ohms m A Leakage Current IR A Max @ VR Volts Maximum Zener Current IZM Madc 225 246 208 193 180 169 150 159 142 135 123 112 100 96 90 82 75 69 63 57 53 48 44 40 36 33 30 27 25 22 21 19 18 17 16 15 14 13 Surge Current @ TA = 25 ir - m A (Note 4.) 1.82 1.66 1.54 1.43 1.33 1.25 1.18 1.11 1.05 1 0.91 0.83 0.74 0.71 0.67 0.61 0.56 0.51 0.45 0.42 0.39 0.36 0.32 0.29 0.27 0.24 0.22 0.2 0.18 0.16 0.15 0.14 0.13 0.12 0.12 0.11 0.1 0.1 3EZ11 3EZ12 3EZ13 3EZ14 3EZ15 3EZ16 3EZ17 3EZ18 3EZ19 3EZ20...