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TGA25N120ND - NPT trench IGBT

Features

  • 1200V NPT Trench Technology.
  • High Speed Switching.
  • Low Conduction Loss.
  • Positive Temperature Coefficient.
  • Easy parallel Operation.
  • RoHS compliant.
  • JEDEC Qualification.

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Datasheet preview – TGA25N120ND

Datasheet Details

Part number TGA25N120ND
Manufacturer TRinno
File Size 1.14 MB
Description NPT trench IGBT
Datasheet download datasheet TGA25N120ND Datasheet
Additional preview pages of the TGA25N120ND datasheet.

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Full PDF Text Transcription

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Features: • 1200V NPT Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification Applications : Induction Heating, Soft switching application TGA25N120ND NPT trench IGBT E GC Device TGA25N120ND Package TO-3P Marking TGA25N120ND Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current Pulsed Collector Current (Note 1) Diode Continuous Forward Current Diode Maximum Forward Current Power Dissipation Operating Junction Temperature TC = 25 ℃ TC = 100 ℃ TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Notes : (1) Repetitive rating : Pulse width limited b
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