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TGAN60N65F2DS - Field Stop Trench IGBT

Features

  • 650V Field Stop Trench IGBT Technology.
  • Low Switching Loss for a Wide Temperature Range.
  • Positive Temperature Coefficient.
  • Easy Parallel Operation.
  • RoHS Compliant.
  • JEDEC Qualification.
  • 175℃ Operating Temperature.

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Datasheet preview – TGAN60N65F2DS

Datasheet Details

Part number TGAN60N65F2DS
Manufacturer TRinno
File Size 818.56 KB
Description Field Stop Trench IGBT
Datasheet download datasheet TGAN60N65F2DS Datasheet
Additional preview pages of the TGAN60N65F2DS datasheet.

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Full PDF Text Transcription

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Features • 650V Field Stop Trench IGBT Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel Operation • RoHS Compliant • JEDEC Qualification • 175℃ Operating Temperature Applications UPS, Inverter, Solar, Welder TGAN60N65F2DS Field Stop Trench IGBT E GC Device Package Marking Remark TGAN60N65F2DS TO-3PN TGAN60N65F2DS RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage Gate-Emitter Voltage VCES VGES 650 V ±20 V Continuous Collector Current TC = 25 ℃ TC = 100 ℃ IC 120 A 60 A Pulsed Collector Current (Note 1) ICM 180 A Diode Continuous Forward Current TC = 25 ℃ TC = 100 ℃ IF 120 A 60 A Diode Pulsed Forward Current (Note 2) IFM 200 A Power Dissipation TC = 25 ℃
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