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TGL60N100ND1 - NPT trench IGBT

Key Features

  • 1000V NPT Trench Technology.
  • High Speed Switching.
  • Low Conduction Loss.
  • Positive Temperature Coefficient.
  • Easy parallel Operation.
  • RoHS compliant.
  • JEDEC Qualification.

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Datasheet Details

Part number TGL60N100ND1
Manufacturer TRinno
File Size 930.11 KB
Description NPT trench IGBT
Datasheet download datasheet TGL60N100ND1 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features: • 1000V NPT Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification Applications : Induction Heating, Soft switching application TGL60N100ND1 NPT trench IGBT GC E Device TGL60N100ND1 Package TO-264 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current Pulsed Collector Current (Note 1) Diode Continuous Forward Current Power Dissipation Operating Junction Temperature TC = 25 ℃ TC = 100 ℃ TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Marking TGL60N100ND1 Symbol VCES VGES Ic ICM IF PD TJ TSTG TL Value 1000 ±20 60 42 120 15 463 185