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TGL60N100ND1 - NPT trench IGBT

Datasheet Summary

Features

  • 1000V NPT Trench Technology.
  • High Speed Switching.
  • Low Conduction Loss.
  • Positive Temperature Coefficient.
  • Easy parallel Operation.
  • RoHS compliant.
  • JEDEC Qualification.

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Datasheet preview – TGL60N100ND1

Datasheet Details

Part number TGL60N100ND1
Manufacturer TRinno
File Size 930.11 KB
Description NPT trench IGBT
Datasheet download datasheet TGL60N100ND1 Datasheet
Additional preview pages of the TGL60N100ND1 datasheet.

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Full PDF Text Transcription

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Features: • 1000V NPT Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification Applications : Induction Heating, Soft switching application TGL60N100ND1 NPT trench IGBT GC E Device TGL60N100ND1 Package TO-264 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current Pulsed Collector Current (Note 1) Diode Continuous Forward Current Power Dissipation Operating Junction Temperature TC = 25 ℃ TC = 100 ℃ TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Marking TGL60N100ND1 Symbol VCES VGES Ic ICM IF PD TJ TSTG TL Value 1000 ±20 60 42 120 15 463 185
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