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TMD3N50AZG - N-channel MOSFET

Download the TMD3N50AZG datasheet PDF. This datasheet also covers the TMD3N50AZ variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low gate charge.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant.
  • Halogen free package.
  • JEDEC Qualification.
  • Improved ESD performance D-PAK TMD3N50AZ(G)/TMU3N50AZ(G) BVDSS 500V N-channel MOSFET ID RDS(on) 2.5A < 2.8W I-PAK Device TMD3N50AZ / TMU3N50AZ TMD3N50AZG / TMU3N50AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Not.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TMD3N50AZ-TRinno.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TMD3N50AZG
Manufacturer TRinno
File Size 444.26 KB
Description N-channel MOSFET
Datasheet download datasheet TMD3N50AZG Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD3N50AZ(G)/TMU3N50AZ(G) BVDSS 500V N-channel MOSFET ID RDS(on) 2.5A < 2.