TMD4N60AZG - N-channel MOSFET

Download the TMD4N60AZG datasheet PDF. This datasheet also covers the TMD4N60AZ variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

Low gate charge.
100% avalanche tested.
Improved dv/dt capability.
RoHS compliant.
Halogen free package.
JEDEC Qualification.
Improved ESD performance D-PAK TMD4N60AZ(G)/TMU4N60AZ(G) BVDSS 600V N-channel MOSFET ID RDS(on) 4.0A < 2.5W I-PAK Device TMD4N60AZ / TMU4N60AZ TMD4N60AZG / TMU4N60AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Not.

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TMD4N60AZG n-channel mosfet by TRinno - Datasheet Preview — Note: The manufacturer provides a single datasheet file (TMD4N60AZ-TRinno.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	TMD4N60AZG
Manufacturer	TRinno
File Size	453.63 KB
Description	N-channel MOSFET
Datasheet	TMD4N60AZG Datasheet

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Other Datasheets by TRinno

Part Number	Description
TMD4N60AZ	N-channel MOSFET
TMD4N65AZ	N-channel MOSFET
TMD4N65AZG	N-channel MOSFET
TMD4N65Z	N-channel MOSFET
TMD4N65ZG	N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD4N60AZ(G)/TMU4N60AZ(G) BVDSS 600V N-channel MOSFET ID RDS(on) 4.0A < 2.