TMD6N70G Description
TMD6N70(G)/TMU6N70(G) 1.04 110 Unit ℃/W ℃/W 1/6 TMD6N70(G)/TMU6N70(G) : Pulse width limited by safe operating area 2. L=14mH, I AS = 5A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 5A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting.
TMD6N70G Key Features
- Low gate charge
- 100% avalanche tested
- Improved dv/dt capability
- RoHS pliant
- Halogen free package
- JEDEC Qualification