TRinno TMP2N60Z
N-channel MOSFET
FEATURES
● Low gate charge● 100% avalanche tested
● Improved dv/dt capability
● RoHS compliant
● Halogen free package
● JEDEC Qualification TMP2N60Z(G)/TMPF2N60Z(G) BVDSS 600V N-channel MOSFET ID RDS(on)MAX 2A <4.0W Device TMP2N60Z / TMPF2N60Z TMP2N60ZG / TMPF2N60ZG Package TO-220 / TO-220F TO-220 / TO-220F
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP2N60Z / TMPF2N60Z TMP2N60ZG / TMPF2N60ZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP2N60Z(G) TMPF2N60Z(G) 600 ±30 2 2...