Datasheet4U Logo Datasheet4U.com

TMP7N60 - FET

Key Features

  • Low gate charge.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant.
  • Halogen free package.
  • JEDEC Qualification TMP7N60/TMPF7N60 TMP7N60G/TMPF7N60G VDSS = 660 V @Tjmax ID = 7A RDS(on) = 1.25 W(max) @ VGS= 10 V D G S Device TMP7N60 / TMPF7N60 TMP7N60G / TMPF7N60G Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃.

📥 Download Datasheet

Datasheet Details

Part number TMP7N60
Manufacturer TRinno
File Size 308.57 KB
Description FET
Datasheet download datasheet TMP7N60 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TMP7N65HY N-Channel Trench MOSFET Unigroup
TMP7N50HF N-Channel Trench MOSFET Unigroup
TMP7N55H N-Channel Trench MOSFET Unigroup
TMP708 Resistor-Programmable Temperature Switch Texas Instruments
TMP709 Resistor-Programmable Temperature Switch Texas Instruments

Other Datasheets by TRinno

Part Number Description
TMP7N60G FET
TMP7N65AZ N-channel MOSFET
TMP7N65AZG N-channel MOSFET
TMP7N65Z N-channel MOSFET
TMP7N65ZG N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP7N60/TMPF7N60 TMP7N60G/TMPF7N60G VDSS = 660 V @Tjmax ID = 7A RDS(on) = 1.