TMPF3N80
Features
- Low gate charge
- 100% avalanche tested
- Improved dv/dt capability
- Ro HS pliant
- Halogen free package
- JEDEC Qualification
TMP3N80/TMPF3N80 TMP3N80G/TMPF3N80G
VDSS = 880 V @Tjmax ID = 3A RDS(ON) = 4.2 W(max) @ VGS= 10 V
Device TMP3N80 / TMPF3N80 TMP3N80G / TMPF3N80G
Package TO-220 / TO-220F TO-220 / TO-220F
S Marking TMP3N80 / TMPF3N80 TMP3N80G / TMPF3N80G
Remark Ro HS
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
- Limited only by maximum junction temperature
Symbol VDSS VGS
IDM EAS IAR EAR
PD dv/dt TJ,...
