TMPF4N90 Datasheet | TRinno

Features - Low gate charge - 100% avalanche tested - Improved dv/dt capability - Ro HS pliant - Halogen free package - JEDEC Qualification TMP4N90(G)/TMPF4N90(G) VDSS = 990 V @Tjmax ID = 4A RDS(ON) = 4.0 W(max) @ VGS= 10 V Device TMP4N90 / TMPF4N90 TMP4N90G / TMPF4N90G Package TO-220 / TO-220F TO-220 / TO-220F S Marking TMP4N90 / TMPF4N90 TMP4N90G / TMPF4N90G Remark Ro HS Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds - Limited only by maximum junction temperature Symbol VDSS VGS IDM EAS IAR EAR PD dv/dt TJ, TSTG Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient August 2013 : Rev 1.0 Symbol Rq JC Rq JA .trinnotech....