TMT3N30G Description
Pulse width limited by safe operating area 2. L=9.3mH, I AS =3A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 3A, di/dt ≤ 200A/µs , VDD ≤.
TMT3N30G Key Features
- Low gate charge
- 100% avalanche tested
- Improved dv/dt capability
- RoHS pliant
- Halogen free package
- JEDEC Qualification