TMU2N65AZG - N-channel MOSFET

Download the TMU2N65AZG datasheet PDF. This datasheet also covers the TMU2N65AZ variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

Low gate charge.
100% avalanche tested.
Improved dv/dt capability.
RoHS compliant.
Halogen free package.
JEDEC Qualification.
Improved ESD performance D-PAK TMD2N65AZ(G)/TMU2N65AZ(G) BVDSS 650V N-channel MOSFET ID RDS(on) 1.8A < 4.6W I-PAK Device TMD2N65AZ / TMU2N65AZ TMD2N65AZG / TMU2N65AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Not.

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TMU2N65AZG n-channel mosfet by TRinno - Datasheet Preview — Note: The manufacturer provides a single datasheet file (TMU2N65AZ-TRinno.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	TMU2N65AZG
Manufacturer	TRinno
File Size	438.64 KB
Description	N-channel MOSFET
Datasheet	TMU2N65AZG Datasheet

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Other Datasheets by TRinno

Part Number	Description
TMU2N65AZ	N-channel MOSFET
TMU2N60AZ	N-channel MOSFET
TMU2N60AZG	N-channel MOSFET
TMU2N60Z	N-channel MOSFET
TMU2N60ZG	N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD2N65AZ(G)/TMU2N65AZ(G) BVDSS 650V N-channel MOSFET ID RDS(on) 1.8A < 4.