TMU4N65AZG
TMU4N65AZG is N-channel MOSFET manufactured by TRinno.
- Part of the TMU4N65AZ comparator family.
- Part of the TMU4N65AZ comparator family.
Features
- Low gate charge
- 100% avalanche tested
- Improved dv/dt capability
- Ro HS pliant
- Halogen free package
- JEDEC Qualification
- Improved ESD performance
D-PAK
TMD4N65AZ(G)/TMU4N65AZ(G)
BVDSS 650V
N-channel MOSFET
ID RDS(on)
4.0A
< 2.4W
I-PAK
Device TMD4N65AZ / TMU4N65AZ TMD4N65AZG / TMU4N65AZG
Package D-PAK/I-PAK D-PAK/I-PAK
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
- Limited only by maximum junction temperature
Marking TMD4N65AZ / TMU4N65AZ TMD4N65AZG / TMU4N65AZG
Remark Ro HS
Halogen Free
Symbol VDSS VGS
IDM EAS IAR EAR
PD dv/dt TJ,...
