TMU4N65Z
TMU4N65Z is N-channel MOSFET manufactured by TRinno.
Features
- Low gate charge
- 100% avalanche tested
- Improved dv/dt capability
- Ro HS pliant
- Halogen free package
- JEDEC Qualification
D-PAK
TMD4N65Z(G)/TMU4N65Z(G)
BVDSS 650V
N-channel MOSFET ID RDS(on) 4A <2.4W
I-PAK
Device TMD4N65Z / TMU4N65Z TMD4N65ZG / TMU4N65ZG
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
- Limited only by maximum junction temperature
Marking TMD4N65Z / TMU4N65Z TMD4N65ZG / TMU4N65ZG
Remark Ro HS
Halogen Free
Symbol VDSS VGS
IDM EAS IAR EAR
PD dv/dt TJ, TSTG
TMD4N65Z(G)/TMU4N65Z(G) 650 ±30 4 2.4 16 242 4 9.84 98.4 0.78 4.5
-55~150
Unit V V A A A m J A m J...
