TMU6N65G - N-channel MOSFET

Key Features

Low gate charge.
100% avalanche tested.
Improved dv/dt capability.
RoHS compliant.
Halogen free package.
JEDEC Qualification TMD6N65G/TMU6N65G VDSS = 715 V @Tjmax ID = 5.5A RDS(on) = 1.6 W(max) @ VGS= 10 V D-PAK I-PAK D G S Device TMD6N65/TMU6N65 TMD6N65G/TMU6N65G Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single.

TMU6N65G n-channel mosfet by TRinno - Datasheet Preview

Datasheet Details

Part number	TMU6N65G
Manufacturer	TRinno
File Size	593.27 KB
Description	N-channel MOSFET
Datasheet	TMU6N65G Datasheet

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMD6N65G/TMU6N65G VDSS = 715 V @Tjmax ID = 5.5A RDS(on) = 1.