TMU8N25Z Datasheet | TRinno

Features - Low gate charge - 100% avalanche tested - Improved dv/dt capability - Ro HS pliant - Halogen free package - JEDEC Qualification D-PAK TMD8N25Z(G)/TMU8N25Z(G) BVDSS 250V N-channel MOSFET ID RDS(on)MAX 8A <0.6W I-PAK Device TMD8N25Z/TMU8N25Z TMD8N25ZG/TMU8N25ZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds - Limited only by maximum junction temperature Marking TMD8N25Z/TMU8N25Z TMD8N25ZG/TMU8N25ZG Remark Ro HS Halogen Free Symbol VDSS VGS IDM EAS IAR EAR PD dv/dt TJ, TSTG TMD8N25Z(G)/TMU8N25Z(G) 250 ±30 8 3.6 32 147 8 5.2 52 0.41 4.5 -55~150 Unit V V A A A m J A m J...