TH25Q-16HB Datasheet | TSINGTENG

TH25Q-16HB Datasheet page1 of 57 Ultra Low Power, 16M-bit Serial Multi I/O Flash Memory Datasheet Feb. 1, 2021 Performance Highlight - Wide Supply Range from 2.7 to 3.6V for Read, Erase and Program - Ultra Low Power consumption for Read, Erase and Program - X1, X2 and X4 Multi I/O Support - High reliability with 100K cycling and 20 Year-retention TSINGTENG Microsystem Co., Ltd TH25Q-16HB Datasheet Contents page2 of 57 1. Features ............................................................................................................................................ 4 2. GENERAL DESCRIPTION ....................................................................................................................... 5 3. MEMORY ORGANIZATION ................................................................................................................... 7 4. DEVICE OPERATION ............................................................................................................................. 8 5. DATA PROTECTION .............................................................................................................................. 9 6. STATUS REGISTER .............................................................................................................................. 11 7. MANDS DESCRIPTION................................................................................................................13 7.1. 7.2. 7.3. 7.4. 7.5. 7.6. 7.7. 7.8. 7.9. 7.10. 7.11. 7.12. 7.13. 7.14. 7.15. 7.16. 7.17. 7.18. 7.19. 7.20. 7.21. 7.22. 7.23. 7.24. 7.25. 7.26. 7.27. 7.28. 7.29. 7.30. 7.31. 7.32. 7.33. 7.34. 7.35. Write Enable (WREN) (06H) .................................................................................................................... 16 Write Disable (WRDI) (04H) .................................................................................................................... 16 Read Status Register (RDSR) (05H...