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SILICON PLANAR PNP TRANSISTOR
2N1132
• High Speed Switching • Hermetic TO-39 Metal package. • Ideally suited for Small Signal General Purpose
and Switching Applications • Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-50V
VCEO
Collector – Emitter Voltage
-40V
VEBO
Emitter – Base Voltage
-5V
IC Continuous Collector Current
-600mA
PD Total Power Dissipation at TA = 25°C
600mW
Derate Above 25°C
3.4mW/°C
PD Total Power Dissipation at TC = 25°C
2W
Derate Above 25°C
11.4mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
RθJC
Thermal Resistance, Junction To Case
Min.
2N1132 Datasheet
