2N1893 - SILICON PLANAR NPN TRANSISTOR

TT Electronics

Datasheet Details

Part number	2N1893
Manufacturer	TT Electronics
File Size	117.00 KB
Description	SILICON PLANAR NPN TRANSISTOR
Datasheet	2N1893 Datasheet

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SILICON PLANAR NPN TRANSISTOR 2N1893 • High Speed Switching • Hermetic TO-39 Metal package. • Ideally suited for Small Signal General Purpose and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 120V VCEO Collector – Emitter Voltage 80V VEBO Emitter – Base Voltage 7V IC Continuous Collector Current 500mA PD Total Power Dissipation at TA = 25°C 800mW Derate Above 25°C 5.7mW/°C PD Total Power Dissipation at TC = 25°C 3W Derate Above 25°C 17.2mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Min.