2N2222A Datasheet | TT Electronics

SILICON SWITCHING NPN TRANSISTOR 2N2222A High Speed Saturated Switching TO-18 Hermetic Package Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD TJ Tstg Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Total Power Dissipation at Junction Temperature Range Storage Temperature Range TA = 25°C Derate Above 25°C 75V 40V 6V 0.8A 500m W 2.86m W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Max. 350 150 Units °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages...