2N2857 - SILICON RF SMALL SIGNAL NPN TRANSISTOR

TT Electronics

Datasheet Details

Part number	2N2857
Manufacturer	TT Electronics
File Size	169.44 KB
Description	SILICON RF SMALL SIGNAL NPN TRANSISTOR
Datasheet	2N2857 Datasheet

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SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857 • High Current Gain-Bandwidth Product (fT) • Hermetic Ceramic Surface Mount Package • Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 30V VCEO Collector – Emitter Voltage 15V VEBO Emitter – Base Voltage 3V IC Continuous Collector Current 40mA PD Total Power Dissipation at TA = 25°C 200mW Derate Above 25°C 1.14mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Max.