TT 2N2907AQCSM
QUAD SILICON PLANAR EPITAXIAL PNP TRANSISTORS
| Part No. | 2N2907AQCSM |
|---|---|
| Datasheet | 2N2907AQCSM Download |
| Manufacturer |  TT |
| Description | QUAD SILICON PLANAR EPITAXIAL PNP TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
● Screening Options AvailableABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated) Per Device Total Package VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Voltage -60V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -600mA PD Total Power Dissipation at TA = 25°C 500mW 2W Derate Above 37.5°C 3.08mW/°C 12.3mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES (Each Device) Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Min. Typ. Max. Units 325 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limi...
