TT 2N3114CSM
SILICON PLANAR EPITAXIAL NPN TRANSISTOR
| Part No. | 2N3114CSM |
|---|---|
| Datasheet | 2N3114CSM Download |
| Manufacturer |  TT |
| Description | SILICON PLANAR EPITAXIAL NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
● Screening Options AvailableABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 150V VCEO Collector – Emitter Voltage 150V VEBO Emitter – Base Voltage 5V IC Continuous Collector Current 150mA PD Total Power Dissipation at TA = 25°C 350mW Derate Above 25°C 2mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Min. Typ. Max. Units 500 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Te...
