TT 2N3637
SILICON PNP TRANSISTOR
| Part No. | 2N3637 |
|---|---|
| Datasheet | 2N3637 Download |
| Manufacturer |  TT |
| Description | SILICON PNP TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
● Hermetic TO39 Package● Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage -175V VCEO Collector – Emitter Voltage -175V VEBO Emitter – Base Voltage -5.0V IC Continuous Collector Current -1.0A PD Total Power Dissipation at TA = 25°C 1.0W Derate Above 25°C 5.71mW/°C TC = 25°C 5.0W Derate Above 25°C 28.6mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Min. Typ. Max. 175 35 Unit °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
