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SILICON PNP TRANSISTOR
2N3637
• General Purpose PNP Silicon Transistor • High Voltage, High Speed Saturated Switching • Low Power Amplifier Applications • Hermetic TO39 Package • Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO Collector – Base Voltage
-175V
VCEO Collector – Emitter Voltage
-175V
VEBO Emitter – Base Voltage
-5.0V
IC
Continuous Collector Current
-1.0A
PD
Total Power Dissipation at
TA = 25°C
1.0W
Derate Above 25°C
5.71mW/°C
TC = 25°C
5.0W
Derate Above 25°C
28.6mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
RθJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
2N3637 Datasheet
