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2N3734 Datasheet PDF

TT 2N3734

GENERAL PURPOSE SILICON NPN TRANSISTOR

Part No. 2N3734
Datasheet 2N3734 Download
Manufacturer
TT
Description GENERAL PURPOSE SILICON NPN TRANSISTOR
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2N3734 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise stated) Symbols Parameters 2N3734 2N3735 VCBO Collector – Base Voltage 50V 75V VCEO Collector – Emitter Voltage 30V 50V VEBO Emitter – Base Voltage 5V IC Collector Current – Continuous (TC = 25°C) PD Total Power Dissipation at TA = 25°C 1.5A 1.0W De-rate Above 25°C 5.7mW/°C PD Total Power Dissipation atTC = 25°C 2.9W De-rate Above 25°C 16.6mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Max. 175 60 Units °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
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