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2N3735 - GENERAL PURPOSE SILICON NPN TRANSISTOR

Download the 2N3735 datasheet PDF. This datasheet also covers the 2N3734 variant, as both devices belong to the same general purpose silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3734-TT.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by TT Electronics

Part Number Description
2N3734 GENERAL PURPOSE SILICON NPN TRANSISTOR
2N3700 SILICON NPN TRANSISTOR
2N3700 SILICON NPN TRANSISTOR
2N3799X SILICON PLANAR EPITAXIAL PNP TRANSISTOR
2N3019 NPN SILICON TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GENERAL PURPOSE SILICON NPN TRANSISTOR 2N3734 / 2N3735 • Hermetic TO-39 Metal Package • General purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) Symbols Parameters 2N3734 2N3735 VCBO Collector – Base Voltage 50V 75V VCEO Collector – Emitter Voltage 30V 50V VEBO Emitter – Base Voltage 5V IC Collector Current – Continuous (TC = 25°C) PD Total Power Dissipation at TA = 25°C 1.5A 1.0W De-rate Above 25°C 5.7mW/°C PD Total Power Dissipation atTC = 25°C 2.9W De-rate Above 25°C 16.6mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Max.